Ushio proudly announces the commencement of mass production for the “1100GD” product line, a groundbreaking 1100 nm LED that delivers double the light output in the SWIR (short wavelength infrared) range, starting June 2024.

This innovative product leverages the advances made with the high-efficiency, high-output “epitex GD series” developed in 2021, now perfected for the 1100 nm LED. The chip, utilizing GaAs (gallium arsenide) based materials, offers an unprecedented light output approximately twice that of the existing “D series” 1100 nm products. In CW mode, the new LED achieves a world-class* light output of 590 mW at a 1A drive current, and 880 mW at a 2A drive current in Pulse mode. The increase in light output also brings about a 1.8-fold improvement in energy efficiency (W

wall-plug efficiency), promising reduced heat generation during operation and minimal changes in performance characteristics such as light output and wavelength shift. The “1100GD” also boasts reduced light output fluctuation in response to temperature changes, facilitating easier heat dissipation management compared to its “D series” predecessors.

*According to Ushio’s research

■Main Applications

The “1100GD” series is tailored for a variety of high-tech applications including:

  • Defect inspection of silicon wafers
  • Solar simulation
  • Defect inspection in solar cells
  • Foreign matter inspection
  • Biosensing
  • Sorting of food and other materials
  • High-temperature glass defect inspection
  • Machine vision
  • Liquid filling level inspection
  • Moisture detection
  • Plastic sorting for recycling

Silicon wafers become increasingly transparent to wavelengths near and beyond 1000 nm, with most light penetrating at wavelengths above 1100 nm. Infrared LEDs typically exhibit reduced light output at longer wavelengths. However, the “1100GD” product, with its enhanced light output, is exceptionally suited for detecting internal defects within wafers, leveraging the higher transmittance rates.

In the realm of biosensing, the 1100 nm wavelength penetrates deeper into biological tissues, making it ideal for internal and deep tissue imaging and measurements. This feature is critical in providing more precise evaluations of fine structures and pathological changes within biological tissues (see Figure 1). Additionally, the sensitivity of high-resolution CMOS image sensors to the 1100 nm wavelength is beneficial for observations and analysis in modern biosensing research and medical diagnostics, potentially enhancing the precision of non-invasive diagnostic techniques.

■Product Lineup

Ushio’s epitex 1100GD series includes high-power chip products that can be integrated into various packages such as EDC, SMBB, EDCC, and more. For detailed product handling, please refer to our technical support information.

While the mass production plans for standard power chip products suitable for SMT or molded-type packages remain undecided, inquiries are welcome for those interested in exploring these options.

■Datasheets

For comprehensive specifications and product details, please refer to the following datasheets:

EDCC1100GD-1100
SMBB1100GD-1100
SMBB1100GD-1100-02
SMBB1100GD-1100-03
SMBB1100GD-1100-05
SMBB1100GD-2100S-I
SMBB1100GD-3100S-I
EDC1100GD-1100
EDC1100GD-1100
EDC1100GD-1100-S5

All datas to the SWIR Wavelength:
https://www.ushio.co.jp/en/led/products/?wavelength=1101